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  1. ; ; ; ; ; ( , Optics Letters)

    Ultra-low-loss waveguide fabrication typically requires high-temperature annealing beyond 1000°C to reduce the hydrogen content in deposited dielectric films. However, realizing the full potential of an ultra-low loss will require the integration of active materials that cannot tolerate high temperature. Uniting ultra-low-loss waveguides with on-chip sources, modulators, and detectors will require a low-temperature, low-loss dielectric to serve as a passivation and spacer layers for complex fabrication processes. We report a 250°C deuterated silicon dioxide film for top cladding in ultra-low-loss waveguides. Using multiple techniques, we measure propagation loss below 12 dB/m for the entire 1200–1650 nm range and top-cladding material absorption below 1 dB/m in the S, C, and L bands.

     
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  2. ; ; ; ; ; ; ; ; ; ; et al ( , ACS Applied Materials & Interfaces)
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  3. ; ; ; ; ; ; ; ; ; ; et al ( , Crystals)
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  4. ; ; ; ; ; ; ; ; ; ; et al ( , IEEE Journal of the Electron Devices Society)